LPDDR4

Attēls KEY atslēgas numurs / ražotājs Apraksts / PDF Daudzums / RFQ
K4F2E3S4HA-GFCL

K4F2E3S4HA-GFCL

Samsung Semiconductor

12 Gb x32 4266 Mbps 1.8 / 1.1 / 1.1 V -40 ~ 95 °C 200FBGA Mass Production.

16372gab krājumi

K4F2E3S4HA-GHCL

K4F2E3S4HA-GHCL

Samsung Semiconductor

12 Gb x32 4266 Mbps 1.8 / 1.1 / 1.1 V -40 ~ 105 °C 200FBGA Mass Production.

18111gab krājumi

K4F2E3S4HA-GUCL

K4F2E3S4HA-GUCL

Samsung Semiconductor

12 Gb x32 4266 Mbps 1.8 / 1.1 / 1.1 V -40 ~ 125 °C 200FBGA Mass Production.

14254gab krājumi

K4F2E3S4HM-MFCJ

K4F2E3S4HM-MFCJ

Samsung Semiconductor

12 Gb x32 3733 Mbps 1.8 / 1.1 / 1.1 V -40 ~ 95 °C 200FBGA Mass Production.

16007gab krājumi

K4F2E3S4HM-MHCJ

K4F2E3S4HM-MHCJ

Samsung Semiconductor

12 Gb x32 3733 Mbps 1.8 / 1.1 / 1.1 V -40 ~ 105 °C 200FBGA Mass Production.

23219gab krājumi

K4F4E3S4HF-GFCJ

K4F4E3S4HF-GFCJ

Samsung Semiconductor

4 Gb x32 3733 Mbps 1.8 / 1.1 / 1.1 V -40 ~ 95 °C 200FBGA Mass Production.

14653gab krājumi

K4F4E3S4HF-GHCJ

K4F4E3S4HF-GHCJ

Samsung Semiconductor

4 Gb x32 3733 Mbps 1.8 / 1.1 / 1.1 V -40 ~ 105 °C 200FBGA Mass Production.

15796gab krājumi

K4F4E3S4HF-GUCJ

K4F4E3S4HF-GUCJ

Samsung Semiconductor

4 Gb x32 3733 Mbps 1.8 / 1.1 / 1.1 V -40 ~ 125 °C 200FBGA Mass Production.

20969gab krājumi

K4F6E3D4HB-MFCJ

K4F6E3D4HB-MFCJ

Samsung Semiconductor

16 Gb x32 3733 Mbps 1.8 / 1.1 / 1.1 V -40 ~ 95 °C 200FBGA Mass Production.

17160gab krājumi

K4F6E3D4HB-MHCJ

K4F6E3D4HB-MHCJ

Samsung Semiconductor

16 Gb x32 3733 Mbps 1.8 / 1.1 / 1.1 V -40 ~ 105 °C 200FBGA Mass Production.

21953gab krājumi

K4F6E3S4HM-GFCL

K4F6E3S4HM-GFCL

Samsung Semiconductor

16 Gb x32 4266 Mbps 1.8 / 1.1 / 1.1 V -40 ~ 95 °C 200FBGA Mass Production.

17994gab krājumi

K4F6E3S4HM-GHCL

K4F6E3S4HM-GHCL

Samsung Semiconductor

16 Gb x32 4266 Mbps 1.8 / 1.1 / 1.1 V -40 ~ 105 °C 200FBGA Mass Production.

23172gab krājumi

K4F6E3S4HM-GUCL

K4F6E3S4HM-GUCL

Samsung Semiconductor

16 Gb x32 4266 Mbps 1.8 / 1.1 / 1.1 V -40 ~ 125 °C 200FBGA Mass Production.

21588gab krājumi

K4F8E3S4HB-MFCJ

K4F8E3S4HB-MFCJ

Samsung Semiconductor

8 Gb x32 3733 Mbps 1.8 / 1.1 / 1.1 V -40 ~ 95 °C 200FBGA Mass Production.

24362gab krājumi

K4F8E3S4HB-MHCJ

K4F8E3S4HB-MHCJ

Samsung Semiconductor

8 Gb x32 3733 Mbps 1.8 / 1.1 / 1.1 V -40 ~ 105 °C 200FBGA Mass Production.

16747gab krājumi

K4F8E3S4HD-GFCL

K4F8E3S4HD-GFCL

Samsung Semiconductor

8 Gb x32 4266 Mbps 1.8 / 1.1 / 1.1 V -40 ~ 95 °C 200FBGA Mass Production.

22839gab krājumi

K4F8E3S4HD-GHCL

K4F8E3S4HD-GHCL

Samsung Semiconductor

8 Gb x32 4266 Mbps 1.8 / 1.1 / 1.1 V -40 ~ 105 °C 200FBGA Mass Production.

23654gab krājumi

K4F8E3S4HD-GUCL

K4F8E3S4HD-GUCL

Samsung Semiconductor

8 Gb x32 4266 Mbps 1.8 / 1.1 / 1.1 V -40 ~ 125 °C 200FBGA Mass Production.

22586gab krājumi

K4FBE3D4HM-GFCL

K4FBE3D4HM-GFCL

Samsung Semiconductor

32 Gb x32 4266 Mbps 1.8 / 1.1 / 1.1 V -40 ~ 95 °C 200FBGA Mass Production.

14789gab krājumi

K4FBE3D4HM-GHCL

K4FBE3D4HM-GHCL

Samsung Semiconductor

32 Gb x32 4266 Mbps 1.8 / 1.1 / 1.1 V -40 ~ 105 °C 200FBGA Mass Production.

18364gab krājumi

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