DDR4

Attēls KEY atslēgas numurs / ražotājs Apraksts / PDF Daudzums / RFQ
K4A4G085WE-BIRC

K4A4G085WE-BIRC

Samsung Semiconductor

4 Gb 512M x 8 2400 Mbps 1.2 V -40 ~ 95 °C 78FBGA.

25355gab krājumi

K4ABG165WA-MCWE

K4ABG165WA-MCWE

Samsung Semiconductor

32 Gb 2G x 16 3200 Mbps 1.2 V 0 ~ 85 °C 96FBGA Sample.

22057gab krājumi

K4A4G085WE-BITD

K4A4G085WE-BITD

Samsung Semiconductor

4 Gb 512M x 8 2666 Mbps 1.2 V -40 ~ 95 °C 78FBGA Mass Production.

20168gab krājumi

K4A4G085WF-BCTD

K4A4G085WF-BCTD

Samsung Semiconductor

4 Gb 512M x 8 2666 Mbps 1.2 V 0 ~ 85 °C 78FBGA Mass Production.

20623gab krājumi

K4A4G085WF-BITD

K4A4G085WF-BITD

Samsung Semiconductor

4 Gb 512M x 8 2666 Mbps 1.2 V -40 ~ 95 °C 78FBGA Sample.

15426gab krājumi

K4A4G165WE-BCWE

K4A4G165WE-BCWE

Samsung Semiconductor

4 Gb 256M x 16 3200 Mbps 1.2 V 0 ~ 85 °C 96FBGA Mass Production.

14339gab krājumi

K4A4G165WE-BIRC

K4A4G165WE-BIRC

Samsung Semiconductor

4 Gb 256M x 16 2400 Mbps 1.2 V -40 ~ 95 °C 96FBGA Mass Production.

24465gab krājumi

K4A4G165WE-BITD

K4A4G165WE-BITD

Samsung Semiconductor

4 Gb 256M x 16 2666 Mbps 1.2 V -40 ~ 95 °C 96FBGA Mass Production.

25904gab krājumi

K4A4G165WE-BIWE

K4A4G165WE-BIWE

Samsung Semiconductor

4 Gb 256M x 16 3200 Mbps 1.2 V -40 ~ 95 °C 96FBGA Mass Production.

15824gab krājumi

K4A4G165WF-BCTD

K4A4G165WF-BCTD

Samsung Semiconductor

4 Gb 256M x 16 2666 Mbps 1.2 V 0 ~ 85 °C 96FBGA Mass Production.

26724gab krājumi

K4A4G165WF-BITD

K4A4G165WF-BITD

Samsung Semiconductor

4 Gb 256M x 16 2666 Mbps 1.2 V -40 ~ 95 °C 96FBGA Sample.

19606gab krājumi

K4A8G045WB-BCPB

K4A8G045WB-BCPB

Samsung Semiconductor

8 Gb 2G x 4 2133 Mbps 1.2 V 0 ~ 85 °C 78FBGA Mass Production.

16925gab krājumi

K4A8G045WB-BCRC

K4A8G045WB-BCRC

Samsung Semiconductor

8 Gb 2G x 4 2400 Mbps 1.2 V 0 ~ 85 °C 78FBGA Mass Production.

24868gab krājumi

K4A8G045WB-BCTD

K4A8G045WB-BCTD

Samsung Semiconductor

8 Gb 2G x 4 2666 Mbps 1.2 V 0 ~ 85 °C 78FBGA Mass Production.

20149gab krājumi

K4A8G045WC-BCPB

K4A8G045WC-BCPB

Samsung Semiconductor

8 Gb 2G x 4 2133 Mbps 1.2 V 0 ~ 85 °C 78FBGA Mass Production.

25205gab krājumi

K4A8G045WC-BCRC

K4A8G045WC-BCRC

Samsung Semiconductor

8 Gb 2G x 4 2400 Mbps 1.2 V 0 ~ 85 °C 78FBGA Mass Production.

25285gab krājumi

K4A8G045WC-BCTD

K4A8G045WC-BCTD

Samsung Semiconductor

8 Gb 2G x 4 2666 Mbps 1.2 V 0 ~ 85 °C 78FBGA Mass Production.

23631gab krājumi

K4A8G085WB-BCPB

K4A8G085WB-BCPB

Samsung Semiconductor

8 Gb 1G x 8 2133 Mbps 1.2 V 0 ~ 85 °C 78FBGA Mass Production.

15126gab krājumi

K4A8G085WB-BCRC

K4A8G085WB-BCRC

Samsung Semiconductor

8 Gb 1G x 8 2400 Mbps 1.2 V 0 ~ 85 °C 78FBGA Mass Production.

16925gab krājumi

K4A8G085WB-BCTD

K4A8G085WB-BCTD

Samsung Semiconductor

8 Gb 1G x 8 2666 Mbps 1.2 V 0 ~ 85 °C 78FBGA Mass Production.

25191gab krājumi